Mje05 switchmode npn power transistors on semiconductor. Mje05g datasheet, mje05g pdf, mje05g pinout, equivalent, replacement npn silicon power transistors on semiconductor, schematic, circuit, manual. Npn transistor in jedec to220 plastic package particularly intended for switchmode. Product is preselected in dc current gain group a, c, d, e and f. The 2sc945 is designed for use in driver stage of af amplifier and low speed switching. C electrical, code pulse test tp 300s, duty cycle 2 % cde05rev300904e continental device india. Apt05d npn high voltage power transistors diodes inc. This datasheet provides information about parts that are rohscompliant and or parts that are nonrohscompliant. Power transistor for switching power supply applications the mje07 is designed for high. Npn silicon transistor online from elcodis, view and download ksh05 pdf datasheet, transistors specifications. Please contact your nearest stmicroelectronics sales office for delivery details.
D switching times note in resistive switching circuits, rise, fall, and storage ti mes have been defined and apply to both current and voltage waveforms since they are in phase, however, for inductive loads which are common to switchmode power. Cdil reserves the a xx b xx right to ship any of the groups to customers depending on production. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Rohs mje05anpn rohs semiconductor nell high power products switchmode series npn silicon power transistors 4a 400v 75w features vceosus. Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Unit collector cutoff current icbo v ce700v, ie0 10 ua emitter cutoff current iebo veb6. They are particularly suited for 115 and 220 v switchmode applications such as switching regulators, inverters, motor controls. Internal schematic diagram features high voltage capability low spread of dynamic parameters.
I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation sot89 pc 550 mw to92 750. Silicon diffused power transistor phe05 general description the phe05 is a silicon npn power switching transistor in the to220ab envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. A wide variety of a transistor options are available to you, such as bipolar junction transistor, fieldeffect transistor, and triode transistor. Kse0405 npn silicon transistor absolute maximum ratings tc25c unless otherwise noted electrical characteristics tc25c unless otherwise noted pulse test.
Mje05 datasheet, equivalent, cross reference search. How to determine the pinout of a damaged transistor 01. Switchmode series npn power transistors are designed for use in. Silicon diffused power transistor phe05 datasheet catalog. C945 is an npn silicon planar epitaxial transistor designed for audio frequency amplifier. Silicon npn switching transistor sgsthomson preferred salestype description the mje05 is a silicon multiepitaxial mesa npn transistor in jedec to220 plastic package particularly intended for switchmode applications. Specification, datasheet, tip29a, tip29c, tip30a created date. An isots 16949, iso 9001 and iso 14001 certified company. The datasheet is printed for reference information only. Mje05d mje05g switchmode series npn silicon power transistors these devices are designed for high. Base npn silicon transistor absolute maximum ratings tc25c unless otherwise noted symbol vcbo vceo vebo ic icp ib pc tj tstg collectorbase voltage collectoremitter.
Internal schematic diagram october 1995 absolute maximum ratings. Apt05sug1 diodes incorporated bipolar transistors bjt 450v npn high volt 700vces 450vceo 3. I absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 600 v emitter base voltage vebo 7 v collector current ic 200 ma collector power dissipation. Semiconductor std05 npn silicon power transistor features high speed switching. It uses a hollow emitter structure to enhance switching speeds. Operating junction temperature 150 oc 1 2 3 to220 i2pak. Junction temperature storage temperature v ebo lc lc ib vceo 2 75 150 65 150.
Base voltage collector current total power dissipation junction temperature storage temperature symbol vcbo vceo vebo ic pc tj tstg value electronic characteristics tc25. As is common with most switching transistors, resistive. Tjpk is tjpk may be calculated from the data in fig. Disclaimer this data sheet and its contents the information belong to the premier farnell group the group or are licensed to it. Technical literature, 14026, product development, specification, datasheet, stb05 created date. High voltage fastswitching npn power transistor author. Product is preselected indc current gain group a and group b. However, at lower test currents this relationship may not be valid. The mje05 is a switch mode series npn power transistor, designed for use in highvoltage, highspeed, power switching in inductive circuits, they are particularly suited for 115 and 220v switch mode applications such as switching regulators, inverters, dcdc converters, motor controls, solenoidrelay drivers and deflection circuits.
It is particularly suited for 115 and 220 v switch. Disclaimer this data sheet and its contents the information belong to the premier. To92 plasticencapsulate transistors s9018 transistor npn features z high current gain bandwidth product maximum ratings t a25. These devices feature matte tin plated leads solderable per milstd202, method 208. At high case temperatures, thermal limitations will reduce the. Fjp09 highvoltage fastswitching npn power transistor. Various options for the pinouts of the transistors 01. Internal schematic diagram november 2002 1 2 3 to220 absolute maximum ratings symbol parameter value unit vceo collectoremitter voltage i b 0 400 v. High voltage npn transistor features low spread of dynamic parameters high switching speed low base drive requirement compliant to rohs directive 201165eu and in accordance to weee 200296ec. Refer to jedec specification jesd22a114 and jesd22a115.
Jun 19, 2017 eb05 datasheet vcbo700v, npn transistor, pdf, pinout, equivalent, replacement, schematic, manual, data, circuit, parts, datasheet. Rectron reserves the a xx b xx right to ship any of the groups to customers depending on production. October 2007 rev 1 111 11 stb05 high voltage fastswitching npn power transistor features low spread of dynamic parameters minimum lottolot spread for reliable operation very high switching speed through hole to262 i2pak power package in tube suffix 1 applications electronic ballast for fluorescent lighting switch mode power supplies. Storage temperature t stg55150 c characteristic symbol typ. Sep 05, 2016 05a datasheet high voltage npn transistor st, st05 datasheet, 05a pdf, 05a pinout, 05a manual, 05a schematic, 05a equivalent. Motorola bipolar power transistor device data 3 c, cap acitance pf v cesat, collect oremitter sa turation voltage vol ts v be, baseemitter vol tage vol ts v ce, collect oremitter vol tage vol ts ic, collector current amp ic, collector current amp 1.
Storage temperature tstg55150 oc description parameter symbol test conditions min. Safe operating area curves indicate i cv ce limits of the transistor that must be observed for reliable operation. Stmicroelectronics reserves the right to ship either groups according to production availability. The difference between small signal and large signal models 5. Fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. Halogenfree according to iec 61249221 application ballast lighting charger key performance parameters. Vce limits of the transistor that must be observed for reliable. They are particularly suited for 115 and 220 v switchmode applications such as. Npn plastic power transistor cdl05 to220 plastic package. Eb05 datasheet vcbo700v, npn transistor, pdf, pinout, equivalent, replacement, schematic, manual, data, circuit, parts, datasheet. Apt05d npn high voltage power transistors provide a 450v collectoremitter voltage rating and a high continuous collector current rating of 4a.
The main parameters of the transistor mje01 and 01. The mje09 is a high voltage multiepitaxial mesa npn transistor mounted in jedec to220 plastic package. If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Symbol vcbo vceo vebo pc tj tstg parameter collectorbase voltage collectoremitter voltage. Trans pwr npn 4a 400v to220ab online from elcodis, view and download mje05 pdf datasheet, transistors bjt single specifications. Obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. There are a transistor suppliers, mainly located in asia.
High voltage fastswitching npn power transistor farnell. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. High voltage fastswitching npn power transistor datasheet production data figure 1. For design aid only, not subject to production testing. E05250 mje05 series silicon npn power transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Absolute maximum ratings ta 25 ocparameter datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors.
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